South Korea’s top tech giant Samsung Electronics said Wednesday it plans to begin mass production of the industry’s first 12-gigabit mobile dynamic random access memory chip, which boasts a sharp improvement in speed and capacity.

Samsung Electronics said the 12Gb Low Power Double Data Rate 4, based on its 20-nanometer production technology, will boast speed that is 30 percent faster than the preceding 8Gb model, and consume 20 percent less energy.

The full-fledged mass production of the latest model will start later this year, Samsung said.

Samsung said the latest development has allowed the company to tap deeper into the high-capacity mobile DRAM market amid soaring demand from flagship smartphones and tablet PCs.

The company said it is capable of building a 6-gigabyte mobile DRAM by combining four 12Gb chips, which will provide an improved environment to run high-end content such as Ultra HD videos on smartphones.

The 6GB-package also boasts the same size as the current 3GB package, providing manufacturers of smart devices with more leeway in design and production. (Yonhap)