The 6-gigabit double data rate-3, or DDR3 modules based on 20-nanometer technology will allow the mobile DRAM to boast a data transmission speed of 2,133Mb per second, while significantly lowering power consumption for better efficiency, the company said.
Samsung said the productivity of the product has improved 30 percent from the preceding 25-nano products. It will focus on the production of 3 GB products composed of four 6-gigabit DRAM mobile chips.
The world’s No. 1 maker of handsets said the new product is set to take the lead in the global market amid the rising demand for high-end smartphones, tablet PCs and wearable devices. (Yonhap)