SK hynix, the world’s second-largest memory chipmaker, said Wednesday that it has successfully developed the industry’s fastest mobile dynamic access memory.

The so-called wide input/output 2 DRAM is built on 20-nanometer class fabrication technology and can process 51.2 GB of data per second, making it four times faster than low-power DDR4.

The chip manufacturer was able to boost the processing speed by packing 512 units of the I/O, a pathway for data transfer, in the new memory, up from 32 I/Os for the LPDDR4.

“SK hynix will meet the needs of our clients for high-performing DRAMs through the wide IO2,” said Kim Jin-kook, head of SK hynix’s mobile development division.

“It will maintain the leadership in the DRAM market with high-performance and power-efficient products.”

The chipmaker has provided samples of the new DRAM to its partners, and will mass-produce the wide IO2 mobile chip from the second half of 2015.

SK hynix developed a high-bandwidth memory, which is used for graphic DRAMs, based on three-dimensional stacking technology, called a through-silicon via, last December, and 128 GB DDR4 modules for data servers this April.

By Kim Young-won (wone0102@heraldcorp.com)