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SK hynix, the country’s No. 2 chipmaker, said Monday it has developed the industry’s most advanced double data rate-4 module with a capacity of 128 gigabytes, significantly improving speed and efficiency.
Based on the 8 GB DDR4, SK said it expanded the maximum capacity by twofold from the previous model of 64 GB with the Through Silicon Via technology, which allows the dynamic random-access memory to be connected with higher electrical efficiency.
The module has a speed of 2,133 megabits per second, compared with the 1,333 Mbps of DDR3, and consumes less power by working on 1.2 voltage, compared with the 1.35 voltage of its predecessor.
“The development of the world’s first 128 GB DDR4 module has its significance in opening ultrahigh density server market,” said SK’s senior vice president Hong Sung-joo, adding it will further strengthen its competitiveness in premium DRAM sector. (Yonhap)
Based on the 8 GB DDR4, SK said it expanded the maximum capacity by twofold from the previous model of 64 GB with the Through Silicon Via technology, which allows the dynamic random-access memory to be connected with higher electrical efficiency.
The module has a speed of 2,133 megabits per second, compared with the 1,333 Mbps of DDR3, and consumes less power by working on 1.2 voltage, compared with the 1.35 voltage of its predecessor.
“The development of the world’s first 128 GB DDR4 module has its significance in opening ultrahigh density server market,” said SK’s senior vice president Hong Sung-joo, adding it will further strengthen its competitiveness in premium DRAM sector. (Yonhap)
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Articles by Korea Herald
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