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Samsung Electronics has unveiled a solid state drive based on the world’s first 3D vertical NAND flash.
The world’s largest memory chip maker revealed the storage drive fitted with the V-NAND at the Flash Memory Summit 2013 in Santa Clara on Tuesday, according to industry sources.
The products used the 128GB multi-level cell three-dimensional V-NAND which recently Samsung began to mass produce. The V-NAND will help realize the same level of durability and reliability of the high-performance as solid state drives based on a single level cell.
When compared to the drives using the 20 nanometer NAND flash memory chip, the V-NAND will have optimized capacity for large-scale data centers or business servers, while the write speed was increased 20 percent and the power consumption slashed by up to 40 percent.
By Shin Ji-hye (shinjh@heraldcorp.com)
The world’s largest memory chip maker revealed the storage drive fitted with the V-NAND at the Flash Memory Summit 2013 in Santa Clara on Tuesday, according to industry sources.
The products used the 128GB multi-level cell three-dimensional V-NAND which recently Samsung began to mass produce. The V-NAND will help realize the same level of durability and reliability of the high-performance as solid state drives based on a single level cell.
When compared to the drives using the 20 nanometer NAND flash memory chip, the V-NAND will have optimized capacity for large-scale data centers or business servers, while the write speed was increased 20 percent and the power consumption slashed by up to 40 percent.
By Shin Ji-hye (shinjh@heraldcorp.com)
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Articles by Korea Herald
